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SiC/TaC Coated Components

MOCVD for LED and Si/SiC Epi Susceptors for semiconductors
TaC Coated Susceptor
(SiC Epi / UV LED Susceptor)
SiC Coated Susceptor
(ALD / Si Epi / LED MOCVD Susceptor)

Purposes

  • LED(Light Emitting Diode) Wafer Carrier
  • ALD(Semiconductor) Susceptor
  • EPI Susceptor

Features

  • Usable under GaN, GaAs atmosphere
  • Super high purity
  • Excellent chemical resistance
  • No outgassing

Material properties
(Extruded graphite)

Material properties
SiC TaC
Field of use Semiconductor Equipment Ceramic Jig
(Focus Ring, Shower Head, Dummy Wafer)
SiC Single crystal growth, Epi, UVLED Equipment parts
Major Features Ultra high purity, Excellent Plasma resistance Excellent high temperature stability
(high temperature process conformance)
Properties Purity >99.9999% >99.9999%
Density (g/cm 3) 3.21 14.3~14.65
Thermal conductivity (W/m-K) 200 ~ 360 21
Coefficient of thermal expansion(/℃) 4.5~5 6.7~7.2
Hardness (kg/mm 2) 2900~3300 6.7~7.2
Resistivity [Ωcm] 0.1~15,000 <1
Corrosion resistance, (HCl)[2300 ℃] x