TaC Coated Susceptor (SiC Epi / UV LED Susceptor)
SiC Coated Susceptor(ALD / Si Epi / LED MOCVD Susceptor)
Pyro Coated Upper Tube(Ingot Grower Hot Zone)
용도
- LED(Light Emitting Diode) Wafer Carrier
- ALD(Semiconductor) Susceptor
- EPI Susceptor
특징
- Usable under GaN, GaAs atmosphere
- Super high purity
- Excellent chemical resistance
- No outgassing
Material properties
(Extruded graphite)
| SiC | TaC | Pyro | ||
|---|---|---|---|---|
| 사용분야 | 반도체 장비 세라믹 치구 (Focus Ring, Shower Head, Dummy Wafer) |
SiC 단결정성장, Epi, UVLED 장비 부품 | Si 단결정 성장 부품 | |
| 주요특징 | 초고순도, 내플라즈마 특성 우수 | 우수한 고온안정성 (고온공정 적합) | 고온 안정성, 이방성, 내화학성 | |
| Properties | Purity | >99.9999% | >99.9999% | >99.9999% |
| Density (g/cm 3) | 3.21 | 15 | 1.8 ~ 2.2 | |
| Thermal conductivity (W/m-K) | 200 ~ 360 | 22 | 10 ~200 | |
| Coefficient of thermal expansion(10-6/℃) | 4.5~5 | 6.3 | 1.5 ~ 7.0 | |
| Hardness (kg/mm 2) | 2900~3300 | 6.7~7.2 | 30 ~ 120 | |
| Resistivity [Ωcm] | 0.1~15,000 | <1 | 10-3 ~ 103 | |
| Corrosion resistance, (HCl)[2300 ℃] | x | ◎ | ◎ | |