主要事業

若さのエネルギーと想像力で世界の半導体技術をリードします。

SiC/TaC Coated Components

LED向けMOCVD及び半導体用Si / SiC Epi Susceptors
TaC Coated Susceptor
(SiC Epi / UV LED Susceptor)
SiC Coated Susceptor
(ALD / Si Epi / LED MOCVD Susceptor)

用途

  • LED(Light Emitting Diode) Wafer Carrier
  • ALD(Semiconductor) Susceptor
  • EPI Susceptor

特徴

  • Usable under GaN, GaAs atmosphere
  • Super high purity
  • Excellent chemical resistance
  • No outgassing

Material properties
(Extruded graphite)

Material properties
SiC TaC
使用分野 半導体装備のセラミック治具
(Focus Ring, Shower Head, Dummy Wafer)
SiC 單結晶成長, Epi, UVLED 装備部品
主要特徴 超高純度, anti-plasma 特性優秀 優秀な高温安定性(高温工程適合)
Properties Purity >99.9999% >99.9999%
Density (g/cm 3) 3.21 14.3~14.65
Thermal conductivity (W/m-K) 200 ~ 360 21
Coefficient of thermal expansion(/℃) 4.5~5 6.7~7.2
Hardness (kg/mm 2) 2900~3300 6.7~7.2
Resistivity [Ωcm] 0.1~15,000 <1
Corrosion resistance, (HCl)[2300 ℃] x