TaC Coated Susceptor (SiC Epi / UV LED Susceptor)
SiC Coated Susceptor(ALD / Si Epi / LED MOCVD Susceptor)
Purposes
- LED(Light Emitting Diode) Wafer Carrier
- ALD(Semiconductor) Susceptor
- EPI Susceptor
Features
- Usable under GaN, GaAs atmosphere
- Super high purity
- Excellent chemical resistance
- No outgassing
Material properties
(Extruded graphite)
| SiC | TaC | ||
|---|---|---|---|
| Field of use | Semiconductor Equipment Ceramic Jig (Focus Ring, Shower Head, Dummy Wafer) |
SiC Single crystal growth, Epi, UVLED Equipment parts | |
| Major Features | Ultra high purity, Excellent Plasma resistance | Excellent high temperature stability (high temperature process conformance) |
|
| Properties | Purity | >99.9999% | >99.9999% |
| Density (g/cm 3) | 3.21 | 15 | |
| Thermal conductivity (W/m-K) | 200 ~ 360 | 22 | |
| Coefficient of thermal expansion(10-6/℃) | 4.5~5 | 6.3 | |
| Hardness (kg/mm 2) | 2900~3300 | 6.7~7.2 | |
| Resistivity [Ωcm] | 0.1~15,000 | <1 | |
| Corrosion resistance, (HCl)[2300 ℃] | x | ◎ | |